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Since Emitter emits charges to Base region, the holes flow from Emitter to Base of the PNP Transistor. So, positive holes are the majority carriers in this region.

Hence, Current through the collector junction flows from Collector region to Base region.Ĭonstruction and Symbol of PNP Transistor Emitter region (E)Įmitter has a medium size and greater doping level.

Thus electrons flow from Base to Collector region. The electrons coming from Emitter enter the Collector region via the Base region. In NPN Transistor, the collector region has an n-type of doping. This region has a greater size and medium doping concentration. Collector region (C)Ĭollector of a Transistor collects the charges coming from Emitter via Base. Doping concentration of Base region is made very small to reduce the recombination of holes with the electrons coming from the Emitter region. In NPN Transistor, the doping type of Base is p-type. Base region (B)īase region has the smallest in size and doping concentration. The current at the Emitter terminal is known as the Emitter current ( I E). Therefore, the direction of current flow is shown outward from the Emitter terminal. Therefore, the direction of current flow through the Emitter junction is along Base region to Emitter region.

#Pnp vs npn bjt free

Since the Emitter emits charges to the Base region, the free electrons flow from Emitter to Base of the NPN Transistor. Free electrons are the majority carriers in this region. This region has n-type doping materials like Arsenic, Phosphorus, etc. Construction of NPN BJT TransistorĬonstruction and Symbol of NPN Transistor Emitter region (E)Įmitter has a medium size and greater doping level. Conventional current flow will be in the direction of the flow of Holes and in the opposite direction of electron flow.Ĭonstruction of NPN and PNP Transistor are almost the same, but there are some differences in doping types, direction of current flow, symbols, etc.Ĭlick here to check the difference between NPN and PNP Transistor. Emitter emits the charges towards the Base region and finally, charges are collected by the Collector region after passing through the Base region.The Base of BJT has the smallest doping concentration to reduce electron-hole recombination. Doping concentration of the Emitter region is greater than that of the Collector and Base region.

Collector has a greater size to make sure that the BJT can handle a higher temperature, Emitter has a medium size and the Base has a lower size.

The junction between Emitter and Base is the Emitter-Base junction or simply Emitter Junction and the junction between Collector and Base is the Collector-Base junction or simply Collector junction. Thus, these three region forms two p-n junctions. These three regions are alternatively doped with different types of doping (n-type or p-type).

All the Transistors have three regions – Emitter, Base and Collector.

The size, doping type, doping concentration and direction of current flow in these three layers are the key terms to describe the construction of the Transistor. Construction of BJT TransistorsĪ BJT consists of three doping regions – Emitter, Base and Collector.

Thus, holes are the majority carriers in PNP Transistor. In this type of BJT, the Emitter, Base and Collector regions have p-type, n-type and p-type doping respectively.

#Pnp vs npn bjt full

The full name of PNP transistor is Positive Negative and Positive Transistor. PNP Transistors can be constructed by inserting an n-type region between two p-type regions in a semiconductor substrate. Thus, free electrons are the majority carriers in NPN Transistors. The doping type of the Emitter and Collector are n-type and the doping type of the Base region is p-type. The negative and positive terms refer to the doping type of the three regions of the Transistor. The full form of NPN Transistor is Negative Positive and Negative Transistor. When a p-type region is sandwiched between two n-type regions in a semiconductor substrate, an NPN transistor forms.

PNP Transistor NPN Bipolar junction Transistor.

There are two types of BJT on the basis of doping in three regions. These three parts are the Emitter, Base and Collector regions of the transistor. One can fabricate a BJT by doping a semiconductor substrate with n-type and p-type materials alternatively into three parts.

#Pnp vs npn bjt how to

How to Evaluate Common-Emitter Configuration in Bipolar Junction Transistors or BJTsīipolar Junction Transistor is a three-terminal electronic circuit component or device used to amplify the input signal at the output of an electronic circuit.